R
X
G
Page:

1S1219


si diode
UR 30V
IF 100mA
- -
- -
- -
TJ 200°C
the 1S1219 is a silicon diode, U = 30V, I = 100mA preferred for use in high speed switching applications
Image: -
Source: Hitachi Quick Reference G...... [plus]
Hitachi Quick Reference Guide to Hitachi Semiconductors for Professional use 09/1969
Informations plus avancées pour 1S1219
OEM:Hitachi Ltd.
Package:-
Fiche technique (jpg):disponible
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
-
Liste des type similaires:
-
Recherche des type similaires:Recherche similaire
Composant rech.:recherche

1S1219


si diode
UR 30V
IF 100mA
- -
- -
- -
TJ 200°C
the 1S1219 is a silicon diode, U = 30V, I = 100mA preferred for use in high speed switching applications
Image: -
Source: Hitachi Quick Reference G...... [plus]
Hitachi Quick Reference Guide to Hitachi Semiconductors for Professional use 09/1969
Informations plus avancées pour 1S1219
OEM:Hitachi Ltd.
Package:-
Fiche technique (jpg):disponible
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
-
Liste des type similaires:
-
Recherche des type similaires:Recherche similaire
Composant rech.:recherche

1S1219


si diode
UR 30V
IF 100mA
- -
- -
- -
TJ 200°C
the 1S1219 is a silicon diode, U = 30V, I = 100mA preferred for use in high speed switching applications
Image: -
Source: Hitachi Quick Reference G...... [plus]
Hitachi Quick Reference Guide to Hitachi Semiconductors for Professional use 09/1969
Informations plus avancées pour 1S1219
OEM:Hitachi Ltd.
Package:-
Fiche technique (jpg):disponible
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
-
Liste des type similaires:
-
Recherche des type similaires:Recherche similaire
Composant rech.:recherche